Specifications
| Measurement mode | Full-angle incidence reflection/scattering mode |
|---|---|
| Probe wavelength | Selectable monochromatic light, 400-700 nm |
| Angular resolution | Within 0.17° |
| Incidence range | -64° to +64° |
| Adjustment axes | X / Y / Z adjustable |
| Probe spot | 1 to 3 μm |
| Aperture range | Up to 10 μm |
| Measurement accuracy | Within 10 nm |
| Single-point measurement time | Within 1 minute |
| Polarization | Any polarization angle |
| Sample stage | Customizable automatic scan stage |
Overview
The wafer micro-void metrology equipment targets high aspect ratio micro-void arrays in advanced 3D stacking packaging and integrated circuit wafer fabrication. It is applied mainly to the geometric dimension and topography characterization of high aspect ratio micro-void arrays such as Through-Silicon Via (TSV), providing measurement capability for process development, parameter optimization and quality evaluation in semiconductor microstructure processing.
Integrated Techniques
TSV micro-voids are small in aperture, high in aspect ratio, complex internally and difficult to measure. The instrument integrates angle-resolved optical scattering, white-light interferometry, reflection spectroscopy and confocal microscopy, so that different tasks — critical dimension, depth and topography — can each be served by a suitable technique.
- Angle-resolved optical scattering: non-contact inversion of pitch, linewidth and structural height
- White-light interferometry: surface topography and depth
- Reflection spectroscopy: optical response of films and multi-layer structures
- Confocal microscopy: inner-wall topography of high aspect ratio holes
The optical method is selected and the system customized according to the required measurand, accuracy, throughput and application, providing quantitative support for TSV characterization and etch process window optimization.
Applications
- Advanced packaging TSV topography and dimension metrology (aperture up to 10 μm, accuracy within 10 nm)
- Etch process window optimization and process development
- Quality evaluation of high aspect ratio micro-voids in wafer fabrication
- Correlation analysis between metrology parameters and yield data
Delivery Notes
The instrument uses selectable monochromatic light from 400 to 700 nm, with angular resolution within 0.17°, an incidence range of -64° to +64°, X / Y / Z adjustability, a 1 to 3 μm probe spot, single-point measurement time within 1 minute, any polarization angle and a customizable automatic scan stage.
Seemic works with customers through process matching, prototype validation and on-site integration, and provides automation flow options aligned to customer throughput requirements.