Seemic non-contact optical metrology covers dimensional and topography characterization from dielectric films, gratings and nanowires to high aspect ratio TSV micro-voids and 3D nano optical storage structures. The following tasks and capability figures have been validated.
Case 1 Semiconductor dielectric film thickness
Validated against simulation and experimental data, with a film thickness range of 1 to 500 nm and accuracy within 1 nm.
Case 2 Grating critical parameters
Grating dimensions from 1 to 500 nm with accuracy within 1 nm, inverting top width, bottom width, pitch, height and sidewall angle.
Case 3 Nanowire critical parameters
Nanowire dimensions from 1 to 500 nm with accuracy within 5 nm.
Case 4 Element concentration and dimensions in epitaxy and doping
Doping concentration accuracy within 0.01%, with dimensions from 1 to 500 nm.
Case 5 3D nano optical storage characterization
For high-density 3D optical storage, angle-resolved scattering captures the spectral response of the storage structure; a quantitative link between scattering spectra and structural topography enables optical encoding and decoding of the stored information.
Case 6 Advanced packaging TSV topography
TSV dimensions up to Φ 10 μm with dimensional accuracy within 10 nm.
Method validation
Angle-resolved scattering metrology relies on model-inversion based non-imaging measurement. RCWA electromagnetic modeling generates simulation data, which is compared against experimental data to validate the reliability of the measurement model.
